? semiconductor components industries, llc, 2013 july, 2013 ? rev. 8 1 publication order number: mbrs540t3/d mbrs540t3g, NRVBS540T3G surface mount schottky power rectifier the mbrs540t3 employs the schottky barrier principle in a large area metal ? to ? silicon power diode. state ? of ? the ? art geometry features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. features ? small compact surface mountable package with j ? bend leads ? rectangular package for automated handling ? highly stable oxide passivated junction ? excellent ability to withstand reverse avalanche energy transients ? guard ? ring for stress protection ? nrvb prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these are pb ? free packages* mechanical characteristics ? case: epoxy, molded, epoxy meets ul 94 v ? 0 @ 0.125 in ? weight: 217 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? polarity: notch in plastic body indicates cathode lead ? esd rating: ? machine model, c (> 400 v) ? human body model, 3b (> 8000 v) ? device meets msl 1 requirements *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information smc case 403 schottky barrier rectifier 5.0 amperes, 40 volts marking diagram ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. mbrs540t3g smc (pb ? free) 2,500 / tape & reel http://onsemi.com b540 = specific device code a = assembly location y = year ww = work week = pb ? free package ayww b540 (note: microdot may be in either location) NRVBS540T3G smc (pb ? free) 2,500 / tape & reel
mbrs540t3g, NRVBS540T3G http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 40 v average rectified forward current (at rated v r , t c = 105 c) i f(av) 5 a peak repetitive forward current (at rated v r , square wave, 20 khz, t c = 80 c) i frm 10 a non ? repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 190 a storage temperature range tstg ? 65 to +150 c operating junction temperature (note 1) t j ? 65 to +150 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit thermal resistance, junction ? to ? lead (note 2) thermal resistance, junction ? to ? ambient (note 2) r jl r ja 12 111 c/w 2. rating applies when surface mounted on the minimum pad size recommended. electrical characteristics characteristic symbol value unit maximum instantaneous forward voltage (note 3) (i f = 5.0 a, t c = 25 c) v f 0.50 v maximum instantaneous reverse current (note 3) (rated dc voltage, t c = 25 c) (rated dc voltage, t c = 100 c) i r 0.3 15 ma 3. pulse test: pulse width 300 s, duty cycle 2.0%.
mbrs540t3g, NRVBS540T3G http://onsemi.com 3 typical characteristics figure 1. typical forward voltage figure 2. maximum forward voltage figure 3. typical reverse current figure 4. maximum reverse current 10 1 0.1 v f , instantaneous forward voltage (v) 0.10 0.30 0.50 t j = 125 c t j = ? 55 c t j = 25 c i f , instantaneous forward current (a) v r , reverse voltage (v) 100e ? 3 10e ? 3 10e ? 6 100e ? 6 30 40 20 10 0 i r , reverse current (a) 100e ? 9 100e ? 12 t j = 125 c 0.20 0.40 0.60 t j = 100 c 10 1 0.1 v f , maximum instantaneous forward voltage (v) 0.10 0.30 0.50 t j = 125 c t j = ? 55 c t j = 25 c i f , instantaneous forward current (a) 0.20 0.40 0.70 t j = 100 c 0.60 1e ? 3 1e ? 6 10e ? 9 1e ? 9 t j = ? 55 c t j = 25 c t j = 100 c v r , reverse voltage (v) 100e ? 3 10e ? 3 10e ? 6 100e ? 6 30 40 20 10 0 i r , maximum reverse current (a) t j = 125 c 1e ? 3 1e ? 6 t j = ? 55 c t j = 25 c t j = 100 c t j = ? 40 c t j = ? 40 c figure 5. current derating 25 50 75 0 5 i o , average forward current (a) t l , lead temperature ( c) figure 6. forward power dissipation 1346 02 5 4.5 0 1.5 i o , average forward current (a) p fo , average power dissipation (w) 1 2 3 4 9 6 7 8 square wave dc 79 8 0.5 1 2.5 2 4 100 150 125 i pk /i o = 5 i pk /i o = freq = 20 khz 3.5 3 dc square wave i pk /i o = i pk /i o = 5 i pk /i o = 10 i pk /i o = 20
mbrs540t3g, NRVBS540T3G http://onsemi.com 4 typical characteristics figure 7. capacitance figure 8. typical operating temperature derating v r , reverse voltage (v) 30 25 20 15 10 5 0 100 1000 c, capacitance (pf) 40 v r , dc reverse voltage (v) 30 25 20 15 10 5 0 115 105 95 85 75 65 55 125 t j , derated operating temperature ( c) 45 35 t j = 25 c 40 35 r ja = 12 c/w r ja = 136 c/w r ja = 47 c/w r ja = 111 c/w r ja = 81 c/w figure 9. thermal response ? mbrs540t3g, NRVBS540T3G on min pad test type > min pad 1 oz r jc = min pad 1 oz c/w p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 t, time (s) figure 10. thermal response ? mbrs540t3g, NRVBS540T3G on 1? pad r(t), transient thermal response (c/w) 100 1 0.1 0.2 d = 0.5 0.05 single pulse 0.1 0.00001 0.0001 0.001 0.01 1 100 1000 0.01 10 0.1 10 test type > min pad 1 oz r jc = min pad 1 oz c/w p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 t, time (s) r(t), transient thermal response (c/w) 1000 1 0.1 0.2 d = 0.5 0.05 single pulse 0.1 0.00001 0.0001 0.001 0.01 1 100 1000 0.01 10 0.1 10 0.02 0.02 100
mbrs540t3g, NRVBS540T3G http://onsemi.com 5 package dimensions smc case 403 ? 03 issue e dim a min nom max min millimeters 1.90 2.13 2.41 0.075 inches a1 0.05 0.10 0.15 0.002 b 2.92 3.00 3.07 0.115 c 0.15 0.23 0.30 0.006 d 5.59 5.84 6.10 0.220 e 6.60 6.86 7.11 0.260 l 0.76 1.02 1.27 0.030 0.084 0.095 0.004 0.006 0.118 0.121 0.009 0.012 0.230 0.240 0.270 0.280 0.040 0.050 nom max 7.75 7.94 8.13 0.305 0.313 0.320 h e 4.343 0.171 3.810 0.150 2.794 0.110 mm inches scale 4:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* e bd c l1 l a1 a notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p. 4. 403-01 thru -02 obsolete, new standard 403-03. h e 0.020 ref 0.51 ref l1 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mbrs540t3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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